Deep Energy Levels Formed by Se Implantation in Si

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	Deep Energy Levels Formed by Se Implantation in Si
	Han PD
刊名	chinese physics letters
	2011
卷号	28 期号:3 页码:article no.36108
关键词	SILICON PHOTODETECTOR
ISSN号	0256-307x
通讯作者	han, pd, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. pdhan@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china [60776046, 60976046, 60837001, 61021003]; national basic research program of china [2006cb302802, 2010cb933800]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	to transfer a photon with a 1.55 mu m wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. the deep levels in the silicon with implanted selenium are studied. three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20989]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Han PD. Deep Energy Levels Formed by Se Implantation in Si[J]. chinese physics letters,2011,28(3):article no.36108.
APA	Han PD.(2011).Deep Energy Levels Formed by Se Implantation in Si.chinese physics letters,28(3),article no.36108.
MLA	Han PD."Deep Energy Levels Formed by Se Implantation in Si".chinese physics letters 28.3(2011):article no.36108.