Electrode-contact enhancement in silicon nanowire-array-textured solar cells
Chen C ; Jia R ; Li HF ; Meng YL ; Liu XY ; Ye TC ; Kasai S ; Tamotsu H ; Wu NJ ; Wang SL ; Chu JH
刊名applied physics letters
2011
卷号98期号:14页码:article no.143108
ISSN号0003-6951
通讯作者jia, r, chinese acad sci, inst microelect, beijing 100029, peoples r china. jiarui@ime.ac.cn
学科主题半导体物理
收录类别SCI
资助信息973 projects [2006cb604904, 2009cb320302, 2009cb939703]; chinese nsf [60706023, 60676001, 90401002, 90607022]; cas [yz0635]; chinese academy of solar energy action plan, china ; presto ; japan science and technology agency [4-1-8]; honcho, kawaguchi-shi, saitama, japan [332-0012]
语种英语
公开日期2011-07-05 ; 2011-07-15
附注in the case of the silicon (si) nanowire (nw)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped n+ region at the tips of a si-nw array. the series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. we have studied the physical mechanism of the impact of an increase in doping level at the tips of a si-nw array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell. (c) 2011 american institute of physics. [doi:10.1063/1.3576924]
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/20875]  
专题半导体研究所_半导体超晶格国家重点实验室
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GB/T 7714
Chen C,Jia R,Li HF,et al. Electrode-contact enhancement in silicon nanowire-array-textured solar cells[J]. applied physics letters,2011,98(14):article no.143108.
APA Chen C.,Jia R.,Li HF.,Meng YL.,Liu XY.,...&Chu JH.(2011).Electrode-contact enhancement in silicon nanowire-array-textured solar cells.applied physics letters,98(14),article no.143108.
MLA Chen C,et al."Electrode-contact enhancement in silicon nanowire-array-textured solar cells".applied physics letters 98.14(2011):article no.143108.
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