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	Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment
	You JB; Zhang XW
刊名	physica status solidi-rapid research letters
	2011
卷号	5期号:2页码:74-76
关键词	ZnO LED electroluminescence hydrogen-plasma treatment
ISSN号	1862-6254
通讯作者	zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. xwzhang@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	863 project of china [2009aa03z305]; national natural science foundation of china [60876031]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the effects of h-plasma treatment on the electroluminescence (el) of zno-based light-emitting diodes have been investigated systematically. after h-plasma treatment, the el intensity of the n-zno/aln/p-gan device is observed to be three times stronger than its as-grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously. the increases in electron concentration and mobility of the zno layer resulting from the incorporation of hydrogen atoms into zno are considered to be responsible for the improved performance of the zno-based light-emitting diodes. (c) 2010 wiley-vch verlag gmbh & co. kgaa, weinheim
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21041]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	You JB,Zhang XW. Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment[J]. physica status solidi-rapid research letters,2011,5(2):74-76.
APA	You JB,&Zhang XW.(2011).Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment.physica status solidi-rapid research letters,5(2),74-76.
MLA	You JB,et al."Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment".physica status solidi-rapid research letters 5.2(2011):74-76.

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