Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

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	Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots
	Wang KF; Yang XG; Yang T
刊名	chinese physics letters
	2011
卷号	28 期号:3 页码:article no.38401
ISSN号	0256-307x
通讯作者	yang, t, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. tyang@semi.ac.cn
学科主题	微电子学
收录类别	SCI
资助信息	chinese academy of sciences ; national science foundation of china [60876033, 61076050, 61021003]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	we report the fabrication of intermediate-band solar cells (ibscs) based on quantum dots (qds), which consists of a standard p-i-n structure with multilayer stacks of inas/gaas qds in the i-layer. compared with conventional gaas single-junction solar cells, the ibscs based on inas/gaas qds show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. the results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21281]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang KF,Yang XG,Yang T. Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots[J]. chinese physics letters,2011,28(3):article no.38401.
APA	Wang KF,Yang XG,&Yang T.(2011).Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots.chinese physics letters,28(3),article no.38401.
MLA	Wang KF,et al."Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots".chinese physics letters 28.3(2011):article no.38401.