| Theoretical analysis of Young's modulus and dielectric constant for low-k porous silicon dioxide films (CPCI-S收录) | |
| Li, Kejia[1,2,3]; Xiao, Xia[2]; Jin, Weng[1,3] | |
| 会议名称 | PROGRESSES IN FRACTURE AND STRENGTH OF MATERIALS AND STRUCTURES, 1-4 |
| 关键词 | low-k dielectric constant porous silicon dioxide interconnect Young's modulus |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2101064 |
| 专题 | 华南理工大学 |
| 作者单位 | 1.[1]Peking Univ, Shenzhen Grad Sch, Shenyang 518055, Peoples R China 2.[2]Tianjin Univ, Sch Elect Informat & Engn, Tianjin 300072, Peoples R China 3.[3]Peking Univ, Inst Microelect, Natl key Lab Micro Nanometer Fabricat Technol, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Kejia[1,2,3],Xiao, Xia[2],Jin, Weng[1,3]. Theoretical analysis of Young's modulus and dielectric constant for low-k porous silicon dioxide films (CPCI-S收录)[C]. 见:PROGRESSES IN FRACTURE AND STRENGTH OF MATERIALS AND STRUCTURES, 1-4. |
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