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	A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect (CPCI-S收录)
	Wang, Ling[1,2]; Lin, Xinnan[1,2]; Wang, Wei[1,2]; Wu, Jiazhen[1,2]; Wei, Yiqun[1,2]; Wang, Laidong[1,2]; He, Jin[1,2]; Wang, Ruonan[2]; Wang, Wenping[2]; Wu, Wen[2]
会议名称	NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
关键词	phase change memory Ovonic Threshold Switch space charge effect scaling trend
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2059821
专题	华南理工大学
作者单位	1.[1]Peking Univ, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China
推荐引用方式 GB/T 7714	Wang, Ling[1,2],Lin, Xinnan[1,2],Wang, Wei[1,2],等. A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect (CPCI-S收录)[C]. 见:NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2.

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