Investigation of Mn-Implanted n-Type Ge

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	Investigation of Mn-Implanted n-Type Ge
	Liu LF; Chen NF(陈诺夫); Yin ZG; Yang F; Zhou JP; Zhang FQ
刊名	Journal of Crystal Growth
	2004
通讯作者邮箱	lfliu@red.semi.ac.cn
卷号	265 期号:3-4 页码:466-470
ISSN号	0022-0248
通讯作者	Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
中文摘要	Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature.
学科主题	力学
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	SEMICONDUCTOR ; FERROMAGNETISM
收录类别	SCI
语种	英语
WOS记录号	WOS:000221205100017
公开日期	2007-06-15
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/17282]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Liu LF,Chen NF,Yin ZG,et al. Investigation of Mn-Implanted n-Type Ge[J]. Journal of Crystal Growth,2004,265(3-4):466-470.
APA	Liu LF,陈诺夫,Yin ZG,Yang F,Zhou JP,&Zhang FQ.(2004).Investigation of Mn-Implanted n-Type Ge.Journal of Crystal Growth,265(3-4),466-470.
MLA	Liu LF,et al."Investigation of Mn-Implanted n-Type Ge".Journal of Crystal Growth 265.3-4(2004):466-470.