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	Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor
	Xu, Zhangcheng; Birkedal, Dan; Juhl, Michael; Hvam, Jørn M.
刊名	Applied Physics Letters
	2004
卷号	Vol.85 No.15页码:3259-3261
关键词	indium compounds gallium arsenide III-V semiconductors quantum dot lasers semiconductor quantum dots electroluminescence
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1865626
专题	南开大学
作者单位	The Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300071, P.R. China2Research Center COM, Technical University of Denmark, DK-2800, Lyngby, Denmark
推荐引用方式 GB/T 7714	Xu, Zhangcheng,Birkedal, Dan,Juhl, Michael,et al. Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor[J]. Applied Physics Letters,2004,Vol.85 No.15:3259-3261.
APA	Xu, Zhangcheng,Birkedal, Dan,Juhl, Michael,&Hvam, Jørn M..(2004).Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor.Applied Physics Letters,Vol.85 No.15,3259-3261.
MLA	Xu, Zhangcheng,et al."Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor".Applied Physics Letters Vol.85 No.15(2004):3259-3261.

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