Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry
Chen YY(陈艳艳); Jin G(靳刚)
刊名Spectroscopy
2006
通讯作者邮箱gajin@imech.ac.cn
卷号21期号:10页码:26-31
ISSN号0887-6703
通讯作者Chen, YY (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
中文摘要The refractive index and thickness of SiO2 thin films naturally grown on Si substrates were determined simultaneously within the wavelength range of 220-1100 nm with variable-angle spectroscopic ellipsometry. Different angles of incidence and wavelength ranges were chosen to enhance the analysis sensitivity for more accurate results. Several optical models describing the practical SiO2-Si system were investigated, and best results were obtained with the optical model, including an interface layer between SiO2 and Si, which proved the existence of the interface layer in this work as described in other publications.
学科主题力学
类目[WOS]Spectroscopy
研究领域[WOS]Spectroscopy
关键词[WOS]OPTICAL-CONSTANTS ; SI/SIO2 INTERFACE ; ATOMIC-SCALE ; OXIDE ; SI
收录类别SCI ; EI
原文出处http://spectroscopyonline.findanalytichem.com/spectroscopy/article/articleDetail.jsp?id=381979
语种英语
WOS记录号WOS:000241234300003
公开日期2007-06-15
内容类型期刊论文
源URL[http://dspace.imech.ac.cn/handle/311007/17228]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Chen YY,Jin G. Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry[J]. Spectroscopy,2006,21(10):26-31.
APA 陈艳艳,&靳刚.(2006).Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry.Spectroscopy,21(10),26-31.
MLA 陈艳艳,et al."Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry".Spectroscopy 21.10(2006):26-31.
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