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	The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition
	Pengcheng Tao; Hongwei Liang; Xiaochuan Xia; Qiuju Feng; Dongsheng Wang; Yang Liu; Rensheng Shen; Kexiong Zhang; Xin Cai; Yingmin Luo
刊名	Journal of Materials Science. Materials in Electronics
	2014
卷号	Vol.25 No.10页码:4268-4272
ISSN号	0957-4522;1573-482X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1854640
专题	辽宁师范大学
作者单位	1.State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun, 130012, People’s Republic of China 2.School of Physics and Electronic Technology, Liaoning Normal University, Dalian, 116029, People’s Republic of China 3.School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, 116024, People’s Republic of China
推荐引用方式 GB/T 7714	Pengcheng Tao,Hongwei Liang,Xiaochuan Xia,et al. The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition[J]. Journal of Materials Science. Materials in Electronics,2014,Vol.25 No.10:4268-4272.
APA	Pengcheng Tao.,Hongwei Liang.,Xiaochuan Xia.,Qiuju Feng.,Dongsheng Wang.,...&Guotong Du.(2014).The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition.Journal of Materials Science. Materials in Electronics,Vol.25 No.10,4268-4272.
MLA	Pengcheng Tao,et al."The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition".Journal of Materials Science. Materials in Electronics Vol.25 No.10(2014):4268-4272.

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