Atomic layer deposition of VO2films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

doi:10.1016/j.apsusc.2016.10.044

	Atomic layer deposition of VO2films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor
	Lv, Xinrui 1,2; Cao, Yunzhen 1; Yan, Lu 1; Li, Ying 1; Song, Lixin 1
刊名	Applied Surface Science
	2017
卷号	396 页码:214-220
ISSN号	01694332
DOI	10.1016/j.apsusc.2016.10.044
英文摘要	VO2thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150–200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,hcompared with the bulk VO2(68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition. © 2016 Elsevier B.V.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25649]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 201800, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China
推荐引用方式 GB/T 7714	Lv, Xinrui,Cao, Yunzhen,Yan, Lu,et al. Atomic layer deposition of VO2films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor[J]. Applied Surface Science,2017,396:214-220.
APA	Lv, Xinrui,Cao, Yunzhen,Yan, Lu,Li, Ying,&Song, Lixin.(2017).Atomic layer deposition of VO2films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor.Applied Surface Science,396,214-220.
MLA	Lv, Xinrui,et al."Atomic layer deposition of VO2films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor".Applied Surface Science 396(2017):214-220.