Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop
Chen, Zhuojun; Ding, Ding1; Dong, Yemin2; Shan, Yi2; Zhou, Shuxing3; Hu, Yuanyuan; Zheng, Yunlong2; Peng, Chao4; Chen, Rongmei5
刊名IEEE TRANSACTIONS ON NUCLEAR SCIENCE
2018
卷号65期号:4页码:997
关键词Phase-locked loop (PLL) phase noise reference spur total ionizing dose (TID)
ISSN号0018-9499
DOI10.1109/TNS.2018.2812806
英文摘要The sensitivity of total-ionizing-dose (TID) response on a single-event hardened phase-locked loop (PLL) fabricated in a 130-nm silicon-on-insulator process is investigated. Based on the study of device parameter degradation under radiation exposure, the changes of dc and RF performance of the PLL have been presented. TID experiments on the PLL show that the power-down current increases by 1.5 times, and the tuning range drops by 11.5%. At 600 MHz and up to 500 krad(Si), the integrated phase noise increases by 29.2%, and the reference spur increases by 3.4 dB. Finally, the mechanism underlying impact of TID on the phase noise and reference spur has been discussed comprehensively, which combined measured observations with circuit modeling and simulations.
学科主题Engineering, Electrical & Electronic ; Nuclear Science & Technology
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号WOS:000429967200004
资助机构This work was supported in part by the Fundamental Research Funds for the Central Universities under Grant 2014YJS137, in part by the Key Research Program of the Chinese Academy of Sciences under Grant KGFZD-135-16-015, in part by the CAS Pioneer Hundred Talents Program, and in part by the National Nature Science Foundation of China under Grant 61704031. ; This work was supported in part by the Fundamental Research Funds for the Central Universities under Grant 2014YJS137, in part by the Key Research Program of the Chinese Academy of Sciences under Grant KGFZD-135-16-015, in part by the CAS Pioneer Hundred Talents Program, and in part by the National Nature Science Foundation of China under Grant 61704031.
内容类型期刊论文
源URL[http://ir.sic.ac.cn/handle/331005/25040]  
专题中国科学院上海硅酸盐研究所
作者单位1.Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
5.China Elect Product Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
6.Tsinghua Univ, Key Lab Particle & Radiat Imaging, Minist Educ, Dept Engn Phys, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714
Chen, Zhuojun,Ding, Ding,Dong, Yemin,et al. Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(4):997, 1004.
APA Chen, Zhuojun.,Ding, Ding.,Dong, Yemin.,Shan, Yi.,Zhou, Shuxing.,...&Chen, Rongmei.(2018).Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(4),997.
MLA Chen, Zhuojun,et al."Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.4(2018):997.
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