High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure

doi:10.1021/acsami.8b02390

	High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure
	Zhang, Qing 3,4,5; Shao, Shuangshuang ; Chen, Zheng 1; Pecunia, Vincenzo 2; Xia, Kai 2; Zhao, Jianwen ; Cui, Zheng
刊名	ACS APPLIED MATERIALS & INTERFACES
	2018
卷号	10 期号:18 页码:15847
关键词	inkjet printing metal oxide surface-energy pattern self-aligned PMSQ
ISSN号	1944-8244
DOI	10.1021/acsami.8b02390
英文摘要	A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 mu m width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10(8), maximum mobility of 3.3 cm(2)V(-1)s(-1), negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.
学科主题	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000432205800059
资助机构	This work was supported by the National Key R&D Program of "Strategic Advanced Electronic Materials" (2016YFB0401100), the Basic Research Program of Jiangsu Province (BK20161263), the Jiangsu Province Natural Science Foundation (SBK2017041510), the Science and Technology Program of Guangdong Province (2016B090906002), Basic Research Programme of Suzhou Institute of Nanotech and Nano-bionics (Y5AAY21001), and the National Natural Science Foundation of China (61750110517). ; This work was supported by the National Key R&D Program of "Strategic Advanced Electronic Materials" (2016YFB0401100), the Basic Research Program of Jiangsu Province (BK20161263), the Jiangsu Province Natural Science Foundation (SBK2017041510), the Science and Technology Program of Guangdong Province (2016B090906002), Basic Research Programme of Suzhou Institute of Nanotech and Nano-bionics (Y5AAY21001), and the National Natural Science Foundation of China (61750110517).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24926]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China 2.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China 3.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Joint Int Res Lab Carbon Based Funct Mat & Device, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, 585 Heshuo Rd, Shanghai 201899, Peoples R China 5.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 6.Shanghai Tech Univ, Pudong New Area, 393 Huaxia Middle Rd, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Qing,Shao, Shuangshuang,Chen, Zheng,et al. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(18):15847, 15854.
APA	Zhang, Qing.,Shao, Shuangshuang.,Chen, Zheng.,Pecunia, Vincenzo.,Xia, Kai.,...&Cui, Zheng.(2018).High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.ACS APPLIED MATERIALS & INTERFACES,10(18),15847.
MLA	Zhang, Qing,et al."High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure".ACS APPLIED MATERIALS & INTERFACES 10.18(2018):15847.