Low temperature pressureless sintering of silicon nitride ceramics for circuit substrates in powder electronic devices

doi:10.1016/j.ceramint.2017.12.033

	Low temperature pressureless sintering of silicon nitride ceramics for circuit substrates in powder electronic devices
	Duan, Yusen 1,2; Zhang, Jingxian ; Li, Xiaoguang ; Shi, Ying 1; Xie, Jianjun 1; Jiang, Dongliang
刊名	CERAMICS INTERNATIONAL
	2018
卷号	44 期号:4 页码:4375
关键词	Pressureless sintering Silicon nitride Thermal conductivity Titanium dioxide
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2017.12.033
英文摘要	TiO2-MgO is proposed as new sintering additive for low temperature pressureless sintering of Si3N4 ceramics to be circuit substrate in power electronic devices. The effects of additive content on densification, mechanical and thermal properties of Si3N4 substrate were investigated systemically. Si3N4 ceramics with density of 3.20 g cm(-3) could be obtained with the addition of 10 wt% TiO2-MgO and sintered at 1780 degrees C. The flexural strength, fracture toughness and thermal conductivity were 668 MPa, 5.13 MPa m(1/2) and 55.3 W/(m K), respectively, and the highest thermal conductivity was 60 W/(m K) could be obtained after annealing. Phase compositions at different temperature were characterized by high temperature in-situ XRD. TiC0.3N0.7 s phase was observed and its formation mechanism was investigated. Results showed TiO2-MgO to be effective sintering additive for developing Si3N4 ceramics at low cost and with acceptable mechanical and thermal properties.
学科主题	Materials Science, Ceramics
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000424716200113
资助机构	This work was supported by the National Key Research and Development Program of China (2017YFB0703200, 2016YFB0700305, 2017YFB0310400), National Natural Science Foundation of China (No. 51572277, 51702340), Shanghai Science and Technology Committee (17YF1428800, 17ZR1434800, 17dz2307000), and the State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute Ceramics, Chinese Academy of Sciences. ; This work was supported by the National Key Research and Development Program of China (2017YFB0703200, 2016YFB0700305, 2017YFB0310400), National Natural Science Foundation of China (No. 51572277, 51702340), Shanghai Science and Technology Committee (17YF1428800, 17ZR1434800, 17dz2307000), and the State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute Ceramics, Chinese Academy of Sciences.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24445]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Shanghai Univ, Sch Mat Sci & Engn, 99 Shangda Rd, Shanghai 200444, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Duan, Yusen,Zhang, Jingxian,Li, Xiaoguang,et al. Low temperature pressureless sintering of silicon nitride ceramics for circuit substrates in powder electronic devices[J]. CERAMICS INTERNATIONAL,2018,44(4):4375, 4380.
APA	Duan, Yusen,Zhang, Jingxian,Li, Xiaoguang,Shi, Ying,Xie, Jianjun,&Jiang, Dongliang.(2018).Low temperature pressureless sintering of silicon nitride ceramics for circuit substrates in powder electronic devices.CERAMICS INTERNATIONAL,44(4),4375.
MLA	Duan, Yusen,et al."Low temperature pressureless sintering of silicon nitride ceramics for circuit substrates in powder electronic devices".CERAMICS INTERNATIONAL 44.4(2018):4375.