Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination

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	Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination
	N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU
刊名	Opt Quant Electron
	2013
卷号	40 期号:8
关键词	Insbinfraredfocalplanearrays Numericalsimulation Quantumefficiency
英文摘要	The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths.
学科主题	红外基础研究
WOS记录号	WOS:000321764100016
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7762]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU. Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination[J]. Opt Quant Electron,2013,40(8).
APA	N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU.(2013).Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination.Opt Quant Electron,40(8).
MLA	N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU."Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination".Opt Quant Electron 40.8(2013).