The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique | |
Deng, HH; Tang, HJ; Li, T; Li, X; Wei, P; Zhu, YM; Gong, HM | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2012 | |
卷号 | 27期号:11 |
英文摘要 | The front-illuminated InP/InGaAs/InP PIN hetero-junction photovoltaic subpixels infrared detector has been achieved based on the lateral collection effect of photogenerated carriers. The photoresponse uniformity of the detector is carried out with a LBIC technique at different temperatures between 88 K and 296 K. With the aid of LBIC and the scanning capacitance microscopy (SCM) technique, the holes diffusion length L-p related to temperature was obtained. The result shows that the photoresponse uniformity decreases with temperature dropping, and L-p also varies directly in proportional to root T. The acoustic phonon scattering is the chief scattering mechanism existing in the detector with doped InGaAs (n approximate to 5x10(16) cm(-3)) in the measured temperature range. The LBIC technique can be utilized effectively in the measurement of photoresponse uniformity of InGaAs infrared detectors, especially for the InGaAs subpixels detectors. |
WOS记录号 | WOS:000310447200018 |
公开日期 | 2013-03-18 |
内容类型 | 期刊论文 |
源URL | [http://202.127.1.142/handle/181331/6957] |
专题 | 上海技术物理研究所_上海技物所 |
推荐引用方式 GB/T 7714 | Deng, HH,Tang, HJ,Li, T,et al. The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(11). |
APA | Deng, HH.,Tang, HJ.,Li, T.,Li, X.,Wei, P.,...&Gong, HM.(2012).The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(11). |
MLA | Deng, HH,et al."The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.11(2012). |
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