The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique
Deng, HH; Tang, HJ; Li, T; Li, X; Wei, P; Zhu, YM; Gong, HM
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2012
卷号27期号:11
英文摘要The front-illuminated InP/InGaAs/InP PIN hetero-junction photovoltaic subpixels infrared detector has been achieved based on the lateral collection effect of photogenerated carriers. The photoresponse uniformity of the detector is carried out with a LBIC technique at different temperatures between 88 K and 296 K. With the aid of LBIC and the scanning capacitance microscopy (SCM) technique, the holes diffusion length L-p related to temperature was obtained. The result shows that the photoresponse uniformity decreases with temperature dropping, and L-p also varies directly in proportional to root T. The acoustic phonon scattering is the chief scattering mechanism existing in the detector with doped InGaAs (n approximate to 5x10(16) cm(-3)) in the measured temperature range. The LBIC technique can be utilized effectively in the measurement of photoresponse uniformity of InGaAs infrared detectors, especially for the InGaAs subpixels detectors.
WOS记录号WOS:000310447200018
公开日期2013-03-18
内容类型期刊论文
源URL[http://202.127.1.142/handle/181331/6957]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Deng, HH,Tang, HJ,Li, T,et al. The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(11).
APA Deng, HH.,Tang, HJ.,Li, T.,Li, X.,Wei, P.,...&Gong, HM.(2012).The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(11).
MLA Deng, HH,et al."The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.11(2012).
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