Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage

doi:10.1007/s11664-016-5124-y

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	Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage
	Li P; Tang HJ; Li T; Li X; Shao XM; Pavelka T; Huang L; Gong HM
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2017
卷号	46 期号:4 页码:2061-2066
关键词	SOLAR-CELLS LIFETIME SILICON INGAAS
DOI	10.1007/s11664-016-5124-y
英文摘要	We report measurements of the minority-carrier diffusion length of n-type In0.53Ga0.47As epilayer samples using the surface photovoltage (SPV) method, and the minority-carrier lifetime of the same samples obtained by the microwave photoconductivity decay (mu-PCD) method. The minority-carrier diffusion length was determined from the surface photovoltage and the optical absorption coefficient of the material. By scanning the SPV probe over the sample, the difference in surface photovoltage could be measured, as well as enabling surface photovoltage mapping. Samples having two different doping concentrations were used: sample A with 3 x 10(16) cm(-3) and sample B with 1 x 10(16) cm(-3), having minority-carrier diffusion length at room temperature of 5.59 mu m and 6.3 mu m, respectively. Meanwhile, sample uniformity was investigated using SPV for the first time. Lifetime measurements were performed on the n-type In0.53Ga0.47As epilayer samples using the mu-PCD technique, obtaining the minority-carrier diffusion length indirectly. Comparison of the minority-carrier diffusion length values obtained from SPV versus mu-PCD showed good consistency. Therefore, the presented method could be useful for characterization of the minority-carrier diffusion length of wafers.
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12284]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Li P,Tang HJ,Li T,et al. Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(4):2061-2066.
APA	Li P.,Tang HJ.,Li T.,Li X.,Shao XM.,...&Gong HM.(2017).Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage.JOURNAL OF ELECTRONIC MATERIALS,46(4),2061-2066.
MLA	Li P,et al."Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage".JOURNAL OF ELECTRONIC MATERIALS 46.4(2017):2061-2066.