LPE growth and optical characteristics of GaAs1-xSbx epilayer

	LPE growth and optical characteristics of GaAs1-xSbx epilayer
	Wang Y; Hu SH; Zhou W; Sun Y; Zhang B; Wang C; Dai N
刊名	JOURNAL OF CRYSTAL GROWTH
	2017
卷号	463 页码:123-127
关键词	QUANTUM-WELLS GAASSB TEMPERATURE PHOTOLUMINESCENCE WAVELENGTH DEPENDENCE LAYERS
DOI	10.1016/j.jcrysgro.2017.01.040
英文摘要	A series of GaAs1-xSbx epilayers have been successfully grown on GaAs (100) substrates by liquid phase epitaxy (LPE) technique at about 550 degrees C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1-xSbx epilayers were performed by photo luminescence (PL) and transmission spectra. (C) 2017 Elsevier B.V. All rights reserved.
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12281]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Wang Y,Hu SH,Zhou W,et al. LPE growth and optical characteristics of GaAs1-xSbx epilayer[J]. JOURNAL OF CRYSTAL GROWTH,2017,463:123-127.
APA	Wang Y.,Hu SH.,Zhou W.,Sun Y.,Zhang B.,...&Dai N.(2017).LPE growth and optical characteristics of GaAs1-xSbx epilayer.JOURNAL OF CRYSTAL GROWTH,463,123-127.
MLA	Wang Y,et al."LPE growth and optical characteristics of GaAs1-xSbx epilayer".JOURNAL OF CRYSTAL GROWTH 463(2017):123-127.