Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

doi:10.1063/1.4974999

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	Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination
	Kang TT; Zhang YH; Chen PP; Wang ZH; Yamamoto A
刊名	APPLIED PHYSICS LETTERS
	2017
卷号	110 期号:4
关键词	NEGATIVE PHOTOCONDUCTIVITY INDIUM NITRIDE
DOI	10.1063/1.4974999
英文摘要	Using a light-emitting diode instead of a laser we study the photoconductivity (PC) in the metalorganic vapor phase epitaxy grown InN films under 2.3 K-280K temperature with blocked 300K blackbody radiation. Although InN's negative PC was observed it shows a quick response not a "persistent" one as previously described by PC measurements using laser. An artificial "persistent negative PC" has been experimentally demonstrated by the light heating effect (LHE). The quick response negative PC is weakened by increased temperature and is less dependent on the light intensity. Further analyses show that the so-called "persistent photoconductivity" in InN might be justified as LHE. Published by AIP Publishing.
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12280]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Kang TT,Zhang YH,Chen PP,et al. Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination[J]. APPLIED PHYSICS LETTERS,2017,110(4).
APA	Kang TT,Zhang YH,Chen PP,Wang ZH,&Yamamoto A.(2017).Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination.APPLIED PHYSICS LETTERS,110(4).
MLA	Kang TT,et al."Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination".APPLIED PHYSICS LETTERS 110.4(2017).