Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate

doi:10.1186/s11671-016-1820-z

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	Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate
	Du L; Chen G; Lu W
刊名	NANOSCALE RESEARCH LETTERS
	2017
卷号	12
关键词	SURFACE GROWTH HETEROSTRUCTURES PERFORMANCE
DOI	10.1186/s11671-016-1820-z
英文摘要	In this work Si0.8Ge0.2 is deposited onto the rib-patterned Si (1 1 10) template oriented in the [1 -1 0] direction. Atomic force microscopy (AFM) reveals that the rib sidewalls reshape into pyramid-covered (0 0 1) and smooth {1 1 3} facets respectively while the {1 0 5} facets-bounded lateral SiGe nanowires dominate the rib top along the [5 5 -1] direction. At both the rib shoulder sites and the pyramid vacancy sites self-connecting occurs between the meeting nanowire and pyramids to form elongated huts which are driven by the minimization of the total energy density according to the finite-element simulations results. These results suggest a convenient solution to form lateral SiGe nanowires covering multi-faceted surfaces on the patterned template.
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12279]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Du L,Chen G,Lu W. Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate[J]. NANOSCALE RESEARCH LETTERS,2017,12.
APA	Du L,Chen G,&Lu W.(2017).Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate.NANOSCALE RESEARCH LETTERS,12.
MLA	Du L,et al."Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate".NANOSCALE RESEARCH LETTERS 12(2017).