ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature

doi:10.1016/j.infrared.2017.01.022

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	ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature
	Sun CH; Zhang P; Zhang TN; Chen X; Chen YY; Ye ZH
刊名	INFRARED PHYSICS & TECHNOLOGY
	2017
卷号	85 页码:280-286
关键词	Atomic layer deposition ZnS film Low growth temperature
DOI	10.1016/j.infrared.2017.01.022
英文摘要	ZnS films grown on GaAs and HgCdTe substrates by atomic layer deposition (ALD) under very low temperature were investigated in this work. ZnS films were grown under several temperatures lower than 140 degrees C. The properties of the films were investigated with high-resolution X-ray diffraction (HRXRD) scanning electron microscope (SEM) atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results showed the ZnS films were polycrystalline. The growth rate monotonically decreased with temperature as well as the root mean square (r.m.$) roughness measured by AFM. XPS measurement revealed the films were stoichiometric in Zn and S. (C) 2017 Published by Elsevier B.V.
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12269]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Sun CH,Zhang P,Zhang TN,et al. ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature[J]. INFRARED PHYSICS & TECHNOLOGY,2017,85:280-286.
APA	Sun CH,Zhang P,Zhang TN,Chen X,Chen YY,&Ye ZH.(2017).ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature.INFRARED PHYSICS & TECHNOLOGY,85,280-286.
MLA	Sun CH,et al."ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature".INFRARED PHYSICS & TECHNOLOGY 85(2017):280-286.