InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy

	InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy
	Yu Zhu GAO; Tomuo YAMAGUCHI; Xiu Ying GONG; Hirofumi KAN; Mitsuru AOYAMA; Ning DAI
刊名	Physics Part 1-Regular Papers Short Notes & Review Papers
	2003
卷号	42 期号:7A
公开日期	2011-11-30
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/3427]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Yu Zhu GAO,Tomuo YAMAGUCHI,Xiu Ying GONG,et al. InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy[J]. Physics Part 1-Regular Papers Short Notes & Review Papers,2003,42(7A).
APA	Yu Zhu GAO,Tomuo YAMAGUCHI,Xiu Ying GONG,Hirofumi KAN,Mitsuru AOYAMA,&Ning DAI.(2003).InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy.Physics Part 1-Regular Papers Short Notes & Review Papers,42(7A).
MLA	Yu Zhu GAO,et al."InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy".Physics Part 1-Regular Papers Short Notes & Review Papers 42.7A(2003).