Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier

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	Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier
	Desfeux, Rachel; Li, Xiaoguang; Migot, Sylvie; Chaudhuri, Debapriya; Yang, Hongxin; Chshiev, Mairbek; Yang, Changping; Zhou, Bin; Mangin, Stephane; Liang, Shiheng
刊名	ACS APPLIED MATERIALS & INTERFACES
	2018
卷号	10 期号:36 页码:30614-30622
关键词	Nonvolatile Memory Spinterface Valves Films Semiconductors Storage Polymer Devices
英文摘要	The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDFTrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".
学科主题	Physics
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17204]
专题	2018专题
推荐引用方式 GB/T 7714	Desfeux, Rachel,Li, Xiaoguang,Migot, Sylvie,et al. Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(36):30614-30622.
APA	Desfeux, Rachel.,Li, Xiaoguang.,Migot, Sylvie.,Chaudhuri, Debapriya.,Yang, Hongxin.,...&Lu, Yuan.(2018).Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier.ACS APPLIED MATERIALS & INTERFACES,10(36),30614-30622.
MLA	Desfeux, Rachel,et al."Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier".ACS APPLIED MATERIALS & INTERFACES 10.36(2018):30614-30622.