Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications

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	Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications
	Gao, Wan Tian; Fu, Yang Ming; Wan, Chang Jin; Yu, Fei; Xiao, Hui; Tao, Jian; Guo, Yan Bo; Zhu, Li Qiang
刊名	ADVANCED ELECTRONIC MATERIALS
	2018
卷号	4 期号:11
关键词	Neural Code Depression
英文摘要	Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as approximate to 16 fJ for triggering a postsynaptic current with high signal-to-noise ratio of approximate to 2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode-based inhibitory artificial synapses may find potential applications in neuromorphic platforms.
学科主题	Materials Science
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17053]
专题	2018专题
推荐引用方式 GB/T 7714	Gao, Wan Tian,Fu, Yang Ming,Wan, Chang Jin,et al. Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(11).
APA	Gao, Wan Tian.,Fu, Yang Ming.,Wan, Chang Jin.,Yu, Fei.,Xiao, Hui.,...&Zhu, Li Qiang.(2018).Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications.ADVANCED ELECTRONIC MATERIALS,4(11).
MLA	Gao, Wan Tian,et al."Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications".ADVANCED ELECTRONIC MATERIALS 4.11(2018).