Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2017专题

	Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer
	Xu, Mingsheng; Xu, Dikai; He, Jian; Yu, Xuegong; Gao, Dace; Ma, Lingling; Mu, Xinhui; Zhong, Mengyao; Xu, Yang; Ye, Jichun
刊名	ADVANCED ELECTRONIC MATERIALS
	2017
卷号	3 期号:3 页码:1600516
ISSN号	2199-160X
英文摘要	Graphene/silicon (Gr/Si) solar cells have triggered considerable interest for their potential in low-cost and high-efficiency photovoltaic applications. However, the performance of Gr/Si solar cells is still limited by poor Gr conductivity and carrier recombination at the interface. In this study, a solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) thin film is employed as a carrier selective interlayer in the graphene and n-type Si solar cells, which can increase the work function and conductivity of the Gr due to photoinduced p-type doping under light illumination. Consequently, the Schottky barrier height of the solar cells is enhanced, whereas the carrier recombination at the interface is suppressed. The utilization of antireflection and additional chemical doping at the other side of the Gr layer further improves the performance of the solar cells, which shows a power conversion efficiency of 12.95% with high stability. This study paves a new venue for the development of Gr/Si solar cells toward real applications.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/14068]
专题	2017专题
推荐引用方式 GB/T 7714	Xu, Mingsheng,Xu, Dikai,He, Jian,et al. Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer[J]. ADVANCED ELECTRONIC MATERIALS,2017,3(3):1600516.
APA	Xu, Mingsheng.,Xu, Dikai.,He, Jian.,Yu, Xuegong.,Gao, Dace.,...&Yang, Deren.(2017).Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer.ADVANCED ELECTRONIC MATERIALS,3(3),1600516.
MLA	Xu, Mingsheng,et al."Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer".ADVANCED ELECTRONIC MATERIALS 3.3(2017):1600516.