Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

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	Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis
	Zhu, Yongyuan; Xu, Yuanfeng; Ning, Zeyu; Zhang, Hao; Ni, Gang; Shao, Hezhu; Peng, Bo; Zhang, Xiangchao; He, Xiaoying; Zhu, Heyuan
刊名	RSC ADVANCES
	2017
卷号	7 期号:72 页码:45705-45713
ISSN号	2046-2069
英文摘要	Monolayer pentagonal silicon dicarbide is a 2D material composed entirely of pentagons, and it possesses novel electronic properties possibly leading to many potential applications. In this paper, using first-principles calculations, we have systematically investigated the electronic, mechanical and transport properties of monolayer penta-SiC2 by strain-engineering. By applying in-plane tensile or compressive strain, it is possible to modulate the physical properties of monolayer penta-SiC2, which subsequently changes the transport behaviour of the carriers. More interestingly, at room temperature, the uniaxial compressive strain of -8% along the a-direction can enhance the hole mobility of monolayer penta-SiC2 along the b-direction by almost three orders of magnitude up to 1.14 x 10(6) cm(2) V-1 s(-1), which is much larger than that of graphene, while similar strains have little influence on the electron mobility. The ultrahigh and strain-modulated carrier mobility in monolayer penta-SiC2 may lead to many novel applications in high-performance electronic and optoelectronic devices.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/14064]
专题	2017专题
推荐引用方式 GB/T 7714	Zhu, Yongyuan,Xu, Yuanfeng,Ning, Zeyu,et al. Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis[J]. RSC ADVANCES,2017,7(72):45705-45713.
APA	Zhu, Yongyuan.,Xu, Yuanfeng.,Ning, Zeyu.,Zhang, Hao.,Ni, Gang.,...&Zhu, Heyuan.(2017).Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis.RSC ADVANCES,7(72),45705-45713.
MLA	Zhu, Yongyuan,et al."Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis".RSC ADVANCES 7.72(2017):45705-45713.