Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

	Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications
	Ding, XZ; Miao, B; Gu, ZQ; Wu, BJ; Hu, YM; Wang, H; Zhang, J(张鉴); Wu, DM(吴东岷); Lu, WH; Li, JD(李加东)
刊名	RSC ADVANCES
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5444]
专题	苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_吴东岷团队
通讯作者	Wu DM(吴东岷); Li JD(李加东)
推荐引用方式 GB/T 7714	Ding, XZ,Miao, B,Gu, ZQ,et al. Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications[J]. RSC ADVANCES,2017.
APA	Ding, XZ.,Miao, B.,Gu, ZQ.,Wu, BJ.,Hu, YM.,...&李加东.(2017).Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications.RSC ADVANCES.
MLA	Ding, XZ,et al."Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications".RSC ADVANCES (2017).