Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer

	Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer
	Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao
刊名	JOURNAL OF CRYSTAL GROWTH
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5465]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
通讯作者	Liu JP(刘建平)
推荐引用方式 GB/T 7714	Liang, Feng,Zhao, Degang,Jiang, Desheng,et al. Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer[J]. JOURNAL OF CRYSTAL GROWTH,2017.
APA	Liang, Feng.,Zhao, Degang.,Jiang, Desheng.,Liu, Zongshun.,Zhu, Jianjun.,...&刘建平.(2017).Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer.JOURNAL OF CRYSTAL GROWTH.
MLA	Liang, Feng,et al."Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer".JOURNAL OF CRYSTAL GROWTH (2017).