Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement

	Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement
	Liu, Wei; Zhao, Degang; Jiang, Desheng; Chen, Ping; Shi, Dongping; Liu, Zongshun; Zhu, Jianjun; Yang, Jing; Li, Xiang; Liang, Feng
刊名	MATERIALS RESEARCH EXPRESS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5472]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, Wei,Zhao, Degang,Jiang, Desheng,et al. Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement[J]. MATERIALS RESEARCH EXPRESS,2017.
APA	Liu, Wei.,Zhao, Degang.,Jiang, Desheng.,Chen, Ping.,Shi, Dongping.,...&Zhang, Jian.(2017).Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement.MATERIALS RESEARCH EXPRESS.
MLA	Liu, Wei,et al."Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement".MATERIALS RESEARCH EXPRESS (2017).