Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

	Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy
	He, Shunyu; Xu, Yu; Qi, Lin; Li, Zongyao; Cao, Bing; Wang, Chinhua; Zhang, Jicai(张纪才); Wang, Jianfeng(王建峰); Xu, Ke(徐科)
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5426]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	He, Shunyu,Xu, Yu,Qi, Lin,et al. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017.
APA	He, Shunyu.,Xu, Yu.,Qi, Lin.,Li, Zongyao.,Cao, Bing.,...&Xu, Ke.(2017).Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	He, Shunyu,et al."Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS (2017).