Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

	Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
	Huang, Jun（黄俊）; Niu, Mu Tong（牛牧童）; Zhang, Ji Cai（张纪才）; Wang, Wei; Wang, Jian Feng（王建峰）; Xu, Ke（徐科）
刊名	JOURNAL OF CRYSTAL GROWTH
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5596]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Huang, Jun,Niu, Mu Tong,Zhang, Ji Cai,et al. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer[J]. JOURNAL OF CRYSTAL GROWTH,2017.
APA	Huang, Jun,Niu, Mu Tong,Zhang, Ji Cai,Wang, Wei,Wang, Jian Feng,&Xu, Ke.(2017).Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer.JOURNAL OF CRYSTAL GROWTH.
MLA	Huang, Jun,et al."Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer".JOURNAL OF CRYSTAL GROWTH (2017).