Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2

	Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2
	Wanhuizi Shen; Daifeng Zou; Guozheng Nie; Ying Xu
刊名	Chinese Physics B
	2017
文献子类	期刊论文
英文摘要	The effects of biaxial strain on electronic structure and thermoelectric properties of monolayer WSe2 have been investigated by using first-principles calculations and the semi-classical Boltzmann transport theory. The electronic band gap decreases under strain, and the band structure near Fermi level of monolayer WSe2 is modified by the applied biaxial strain. Furthermore, the doping dependence of thermoelectric properties of n- and p-doped monolayer WSe2 under biaxial strain is estimated. The obtained results show that the power factor of n-doped monolayer WSe2 can be increased by compressive strain while that of p-doping can be increased with tensile strain. Strain engineering thus provides a direct method to control the electronic and thermoelectric properties in these two-dimensional transition metal dichalcogenides materials.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/12126]
专题	深圳先进技术研究院_医工所
作者单位	Chinese Physics B
推荐引用方式 GB/T 7714	Wanhuizi Shen,Daifeng Zou,Guozheng Nie,et al. Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2[J]. Chinese Physics B,2017.
APA	Wanhuizi Shen,Daifeng Zou,Guozheng Nie,&Ying Xu.(2017).Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2.Chinese Physics B.
MLA	Wanhuizi Shen,et al."Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2".Chinese Physics B (2017).