Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step
Tao, M.; J. Guan; F. L. Gao; L. L. Gao and J. S. Cao
刊名Chinese Journal of Electronics
2017
卷号26期号:3
英文摘要For the large driving current of high-power semiconductor Laser diodes (LDs), a modified method to measure the electrical derivative of LDs under scanning driving current with variable step length is proposed, which is to achieve the fast and accurate measurement of optical and electrical characteristic parameters of LDs with a relatively small data acquisition. The experimental results show that, with fewer measurements, this method can effectively and accurately measure and extract the LDs corresponding parameters including threshold current (I-th), voltage-current characteristic (V-I), luminous power-current relation (P-I), electrical derivative curve (IdV/dI-I). The wavelet transformation singularity testing results of the threshold current also verify the accuracy, reliability, and advantage of this method.
语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/59217]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Tao, M.,J. Guan,F. L. Gao,et al. Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step[J]. Chinese Journal of Electronics,2017,26(3).
APA Tao, M.,J. Guan,F. L. Gao,&L. L. Gao and J. S. Cao.(2017).Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step.Chinese Journal of Electronics,26(3).
MLA Tao, M.,et al."Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step".Chinese Journal of Electronics 26.3(2017).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace