Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire

doi:10.1021/acs.jpcc.7b10666

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	Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire
	Wu, D ; Yang, YG ; Zhu, P ; Zheng, XM ; Chen, XL ; Shi, J ; Song, F ; Gao, XY ; Zhang, XA ; Ouyang, FP
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2018
卷号	122 期号:3 页码:1860-1866
关键词	Chemical-vapor-deposition Hydrogen Evolution Reaction Moo2 Nanorods Raman-spectroscopy Mos2 Nanosheets Layer Mos2 Thin-films Performance Moo2/mos2 Graphene
ISSN号	1932-7447
DOI	10.1021/acs.jpcc.7b10666
文献子类	期刊论文
英文摘要	Molybdenum dioxide (MoO2) has attracted many interests due to its unique properties and potential applications. Here, we report the synthesis of high quality MoO2@MoS2 nanorods on c-sapphire substrates through an atmospheric pressure chemical vapor deposition (APCVD) approach. Optical microscopy (OM), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and (grazing incidence) X-ray diffraction ((GI)XRD) measurements reveal that these MoO2 nanorods exhibit epitaxial growth behaviors on c-sapphire substrates with the orientation relationship of MoO2(100)parallel to sapphire(0001) and MoO2 < 001 > aligned well with sapphire < 1010 >. Raman spectroscopy/imaging, energy dispersive spectroscopy (EDS), and GIXRD results disclose that such MoO2 nanorods are wrapped by MoS2 (MoO2@MoS2). Devices based on transferred individual MoO2@MoS2 nanorods show a resistivity of similar to 1.65 X 10(-4) Omega.cm, comfirming that such nanorods possess higher crystalline degree. Our findings will be helpful for the applications of MoO2@MoS2 in the fields of nanoelectronic devices.
语种	英语
WOS记录号	WOS:000423652700047
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/29004]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Wu, D 2.Yang, YG 3.Zhu, P 4.Zheng, XM 5.Chen, XL 6.Shi, J 7.Song, F 8.Gao, XY 9.Zhang, XA 10.Ouyang, FP
推荐引用方式 GB/T 7714	Wu, D,Yang, YG,Zhu, P,et al. Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(3):1860-1866.
APA	Wu, D.,Yang, YG.,Zhu, P.,Zheng, XM.,Chen, XL.,...&Huang, H.(2018).Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire.JOURNAL OF PHYSICAL CHEMISTRY C,122(3),1860-1866.
MLA	Wu, D,et al."Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire".JOURNAL OF PHYSICAL CHEMISTRY C 122.3(2018):1860-1866.