Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors

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	Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors
	Hsiao, L; Wang, S
刊名	MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
	2002-06-01
卷号	12 期号:6 页码:777-796
关键词	full hydrodynamic model semiconductors asymptotic behavior global smooth solutions
ISSN号	0218-2025
英文摘要	In this paper, we study the asymptotic behavior of smooth solutions to the initial boundary value problem for the full one-dimensional hydrodynamic model for semiconductors. We prove that the solution to the problem converges to the unique stationary solution time asymptotically exponentially fast.
WOS研究方向	Mathematics
语种	英语
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
WOS记录号	WOS:000176897300002
内容类型	期刊论文
源URL	[http://ir.amss.ac.cn/handle/2S8OKBNM/17639]
专题	数学所
通讯作者	Hsiao, L
作者单位	Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Wang, S. Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(6):777-796.
APA	Hsiao, L,&Wang, S.(2002).Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(6),777-796.
MLA	Hsiao, L,et al."Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.6(2002):777-796.