simulation of ingan/gan light-emitting diodes with patterned sapphire substrate

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	simulation of ingan/gan light-emitting diodes with patterned sapphire substrate
	Sheng Yang ; Xia Chang Sheng ; Simon Li Z.M. ; Cheng Li Wen
	2012
会议名称	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议日期	August 28, 2012 - August 31, 2012
会议地点	Shanghai, China
关键词	Computer simulation Efficiency Extraction Finite difference time domain method Gallium nitride Optoelectronic devices Sapphire Semiconductor quantum wells Three dimensional computer graphics Time domain analysis
页码	23-24
中文摘要	Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.
英文摘要	Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.
收录类别	EI
会议录	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
语种	英语
ISSN号	2158-3234
ISBN号	9781467316040
内容类型	会议论文
源URL	[http://ir.iscas.ac.cn/handle/311060/15947]
专题	软件研究所_软件所图书馆_会议论文
推荐引用方式 GB/T 7714	Sheng Yang,Xia Chang Sheng,Simon Li Z.M.,et al. simulation of ingan/gan light-emitting diodes with patterned sapphire substrate[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012.