Semiconductor-cavity QED in high-Q regimes: Detuning effect

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	Semiconductor-cavity QED in high-Q regimes: Detuning effect
	Liu, YX; Imoto, N; Ozdemir, SK; Jin, GR; Sun, CP; Liu, YX , Grad Univ Adv Studies SOKEN, Kanagawa 2400193, Japan.
刊名	PHYSICAL REVIEW A
	2002
卷号	65 期号:2 页码:-
关键词	Quantum-well Structures High-density Exciton Optical Nonlinearity Spontaneous Emission Room-temperature Dots Microcavities Computation Laser
ISSN号	1050-2947
英文摘要	The nonresonant interaction between the high-density excitons in a quantum well and a single-mode cavity field is investigated. An analytical expression for the physical spectrum of the excitons is obtained. The spectral properties of the excitons, which are initially prepared in the number states or the superposed states of the two different number states by the resonant femtosecond pulse pumping experiment, are studied. A numerical study of the physical spectrum is carried out and a discussion of the detuning effect is presented.
学科主题	Physics
URL标识	查看原文
WOS记录号	WOS:000173879500102
公开日期	2012-08-29
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/13607]
专题	理论物理研究所_理论物理所1978-2010年知识产出
通讯作者	Liu, YX , Grad Univ Adv Studies SOKEN, Kanagawa 2400193, Japan.
推荐引用方式 GB/T 7714	Liu, YX,Imoto, N,Ozdemir, SK,et al. Semiconductor-cavity QED in high-Q regimes: Detuning effect[J]. PHYSICAL REVIEW A,2002,65(2):-.
APA	Liu, YX,Imoto, N,Ozdemir, SK,Jin, GR,Sun, CP,&Liu, YX , Grad Univ Adv Studies SOKEN, Kanagawa 2400193, Japan..(2002).Semiconductor-cavity QED in high-Q regimes: Detuning effect.PHYSICAL REVIEW A,65(2),-.
MLA	Liu, YX,et al."Semiconductor-cavity QED in high-Q regimes: Detuning effect".PHYSICAL REVIEW A 65.2(2002):-.