Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping

doi:10.1088/1674-1056/27/4/047202

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 机器人与3D打印技术创新中心

	Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping
	Chen, Zhiyu 1; Wang, Ruifeng 2,3; Wang, Guoyu2,3 ; Zhou, Xiaoyuan 4; Wang, Zhengshang 1; Yin, Cong 1; Hu, Qing 1; Zhou, Binqiang 5; Tang, Jun 1,6; Ang, Ran 1,6
刊名	CHINESE PHYSICS B
	2018-04-01
卷号	27 期号:4 页码:5
关键词	thermoelectric materials chalcogenide band engineering precipitation
ISSN号	1674-1056
DOI	10.1088/1674-1056/27/4/047202
英文摘要	We have systematically studied the thermoelectric properties in Zn-doped SnTe. Strikingly, band convergence and embedded precipitates arising from Zn doping, can trigger a prominent improvement of thermoelectric performance. In particular, the value of dimensionless figure of merit zT has increased by 100% and up to similar to 0.5 at 775 K for the optimal sample with 2% Zn content. Present findings demonstrate that carrier concentration and effective mass play crucial roles on the Seebeck coefficient and power factor. The obvious deviation from the Pisarenko line (Seebeck coefficient versus carrier concentration) due to Zn-doping reveals the convergence of valence bands. When the doping concentration exceeds the solubility, precipitates occur and lead to a reduction of lattice thermal conductivity. In addition, bipolar conduction is suppressed, indicating an enlargement of band gap. The Zn-doped SnTe is shown to be a promising candidate for thermoelectric applications.
资助项目	National Natural Science Foundation of China[51771126] ; Youth Foundation of Science & Technology Department of Sichuan Province, China[2016JQ0051] ; Sichuan University Talent Introduction Research Funding[YJ201537] ; Sichuan University Outstanding Young Scholars Research Funding[2015SCU04A20] ; World First-Class University Construction Funding ; Fundamental and Frontier Research in Chongqing[CSTC2015JCYJBX0026]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000430619900002
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/6363]
专题	机器人与3D打印技术创新中心
通讯作者	Tang, Jun; Ang, Ran
作者单位	1.Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Sichuan, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 5.Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China 6.Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Chen, Zhiyu,Wang, Ruifeng,Wang, Guoyu,et al. Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping[J]. CHINESE PHYSICS B,2018,27(4):5.
APA	Chen, Zhiyu.,Wang, Ruifeng.,Wang, Guoyu.,Zhou, Xiaoyuan.,Wang, Zhengshang.,...&Ang, Ran.(2018).Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping.CHINESE PHYSICS B,27(4),5.
MLA	Chen, Zhiyu,et al."Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping".CHINESE PHYSICS B 27.4(2018):5.