Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets

doi:10.1063/1.4973566

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 微纳制造与系统集成研究中心

	Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets
	Wang, Liang1,2 ; Pu, Yayun 1,2; Soh, Ai Kah 3; Shi, Yuping 4; Liu, Shuangyi1,2
刊名	AIP ADVANCES
	2016-12-01
卷号	6 期号:12 页码:6
ISSN号	2158-3226
DOI	10.1063/1.4973566
通讯作者	Liu, SY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave, Chongqing, Peoples R China. ; Liu, SY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China.
英文摘要	Two dimensional (2D) boron nitride (h-BN) nanosheets are well known as their tunable electric properties and well compatible with graphene. Studying the dielectric properties carefully is essential for their promised applications. Most previous first principle studies treated 2D h-BN as a strict 2D system, where the contribution of ion polarization is neglected. The results show obvious deviation from experimental values, and the situations are worse with the stacking layer increasing. Thus, in present works, the dielectric properties of 2D h-BN nanosheets are studied with involving the ion contributions appropriately. The evolution of dielectric performance with stacking layers varying is also studied. Obvious layer dependent anisotropic dielectric properties are predicted, which reaches the bulk h-BN level as the thickness approaching 5.8nm (20L). There should be a balance between dielectric properties and the thickness (stacking layers) for the dielectric applications of 2D h-BN nanosheets. (C) 2016 Author(s).
资助项目	program of Hundreds talents of Chinese Academy of Sciences[R52A261Z10] ; Fundamental and advanced technology Research Funds of Chongqing[cstc2015jcyjbx0103] ; Nature Science Foundation of China(NSFC)-GuangDong Government unite Foundation Supercomputing scientific applied research projects[nsfc2015-475]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000392091500095
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/3236]
专题	微纳制造与系统集成研究中心
通讯作者	Liu, Shuangyi
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave, Chongqing, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 3.Monash Univ Malaysia, Sch Engn, Bandar Sunway, Selangor, Malaysia 4.Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Wang, Liang,Pu, Yayun,Soh, Ai Kah,et al. Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets[J]. AIP ADVANCES,2016,6(12):6.
APA	Wang, Liang,Pu, Yayun,Soh, Ai Kah,Shi, Yuping,&Liu, Shuangyi.(2016).Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets.AIP ADVANCES,6(12),6.
MLA	Wang, Liang,et al."Layers dependent dielectric properties of two dimensional hexagonal boron nitridenanosheets".AIP ADVANCES 6.12(2016):6.