Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification

doi:10.1016/j.seppur.2016.11.002

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 应用技术研究所

	Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification
	Bai, Xiaolong 1,2; Ban, Boyuan 2; Li, Jingwei 2; Fu, Zhiqiang 1; Peng, Zhijian 1; Wang, Chengbiao 1; Chen, Jian 2
刊名	SEPARATION AND PURIFICATION TECHNOLOGY
	2017-03-01
卷号	174 期号:无页码:345-351
关键词	b Removal Ti addiTion Al-si Alloy Directional Solidification Apparent Segregation Coefficient
DOI	10.1016/j.seppur.2016.11.002
文献子类	Article
英文摘要	To determine the effect of Ti addition on B removal during silicon refining by directional solidification of AI-30 wt.% Si alloy, five samples with different amount of Ti addition have been studied. The contents of B in primary Si flakes are reduced to less than 1 ppmw with excess Ti addition. An apparent segregation coefficient is used to characterize the B removal during the refining process, which is determined to be 0.0068 with 2000 ppmw Ti addition at a pulling rate of 0.05 mm s(-1). Almost all the B atoms in the Al-Si melt with the excess Ti addition combine with Ti atoms to form TiB2 particles at the bottom part of the ingot (cold end) before the primary Si growth during directional solidification, resulting in a remarkable B removal rate in the refined primary Si flakes. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词	METALLURGICAL-GRADE SILICON ; AL-SI MELT ; PURIFICATION ; IMPURITIES ; MECHANISM ; PLASMA ; SYSTEM
WOS研究方向	Engineering
语种	英语
WOS记录号	WOS:000389091700040
资助机构	Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; (2016LH0017) ; (2016LH0017) ; (2016LH0017) ; (2016LH0017) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; "100-talent Program" of Chinese Academy of Sciences ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; (2016LH0017) ; (2016LH0017) ; (2016LH0017) ; (2016LH0017) ; 51474201) ; 51474201) ; 51474201) ; 51474201)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/30238]
专题	合肥物质科学研究院_应用技术研究所
作者单位	1.China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Bai, Xiaolong,Ban, Boyuan,Li, Jingwei,et al. Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification[J]. SEPARATION AND PURIFICATION TECHNOLOGY,2017,174(无):345-351.
APA	Bai, Xiaolong.,Ban, Boyuan.,Li, Jingwei.,Fu, Zhiqiang.,Peng, Zhijian.,...&Chen, Jian.(2017).Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification.SEPARATION AND PURIFICATION TECHNOLOGY,174(无),345-351.
MLA	Bai, Xiaolong,et al."Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification".SEPARATION AND PURIFICATION TECHNOLOGY 174.无(2017):345-351.