Resistivity plateau and negative magnetoresistance in the topological semimetal TaSb2
Li, Yuke1,2; Li, Lin1,2; Wang, Jialu1,2; Wang, Tingting1,2; Xu, Xiaofeng1,2; Xi, Chuanying3; Cao, Chao1,2; Dai, Jianhui1,2
刊名PHYSICAL REVIEW B
2016-09-19
卷号94期号:12页码:1-4
DOI10.1103/PhysRevB.94.121115
文献子类Article
英文摘要We report the discovery of a topological semimetal, TaSb2, which crystallizes in a base-centered monoclinic, centrosymmetric structure. The compound undergoes a metal-insulator-like transition under magnetic field and exhibits a clear resistivity plateau below T-c = 13 K. The ultrahigh carrier mobility and extreme large magnetoresistance for longitudinal resistivity are observed at low temperatures in addition to a quantum oscillation behavior with nontrivial Berry phases. Moreover, the negative magnetoresistance is observed when the applied field is parallel to the current direction up to 9 T. The Hall resistivity shows the nearly linear field dependence suggestive of electron-hole noncompensation behavior. These findings uncover a materials basis represented by TaSb2 as a platform of topological materials for future theoretical and experimental investigations.
WOS关键词WEYL FERMION SEMIMETAL ; ARCS ; INSULATORS ; COLLOQUIUM ; DISCOVERY ; CD3AS2 ; STATE ; SMB6
WOS研究方向Physics
语种英语
WOS记录号WOS:000383864300001
资助机构NSF of China(11274006 ; NSF of China(11274006 ; NSF of China(11274006 ; NSF of China(11274006 ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; 11274084) ; 11274084) ; 11274084) ; 11274084) ; NSF of China(11274006 ; NSF of China(11274006 ; NSF of China(11274006 ; NSF of China(11274006 ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; National Basic Research Program(2014CB648400) ; 11274084) ; 11274084) ; 11274084) ; 11274084)
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/24321]  
专题合肥物质科学研究院_中科院强磁场科学中心
作者单位1.Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
2.Hangzhou Normal Univ, Hangzhou Key Lab Quantum Matters, Hangzhou 310036, Zhejiang, Peoples R China
3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
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GB/T 7714
Li, Yuke,Li, Lin,Wang, Jialu,et al. Resistivity plateau and negative magnetoresistance in the topological semimetal TaSb2[J]. PHYSICAL REVIEW B,2016,94(12):1-4.
APA Li, Yuke.,Li, Lin.,Wang, Jialu.,Wang, Tingting.,Xu, Xiaofeng.,...&Dai, Jianhui.(2016).Resistivity plateau and negative magnetoresistance in the topological semimetal TaSb2.PHYSICAL REVIEW B,94(12),1-4.
MLA Li, Yuke,et al."Resistivity plateau and negative magnetoresistance in the topological semimetal TaSb2".PHYSICAL REVIEW B 94.12(2016):1-4.
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