Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics

doi:10.1016/j.ceramint.2016.01.050

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics
	Jin, Peng 1; He, Gang 1; Xiao, Dongqi 1; Gao, Juan 1; Liu, Mao 2; Lv, Jianguo 3; Liu, Yanmei 1; Zhang, Miao 1; Wang, Peihong 1; Sun, Zhaoqi 1
刊名	CERAMICS INTERNATIONAL
	2016-05-01
卷号	42 期号:6 页码:6761-6769
关键词	High-k Gate Dielectrics Sol-gel Electrical Properties Leakage Current Transport Mechanism Optical Properties
DOI	10.1016/j.ceramint.2016.01.050
文献子类	Article
英文摘要	Deposition of high-k HfO2 gate dielectric films on n-type Si and quartz substrates by sol gel spin-on coating technique has been performed and the structural, optical and electrical characteristics as a function of annealing temperature have been investigated. The structural and optical properties of HfO2 thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet visible spectroscopy (UV-vis), and spectroscopic ellipsometry (SE). Results indicate that the monoclinic form of HfO2 appears when temperature rises through and above 500 degrees C. The reduction in band gap is observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density and the decrease of the extinction coefficient with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on AliSi/HfO2/Al capacitor are analyzed by means of the high frequency capacitance voltage (C-V) and the leakage current density voltage (J-V) characteristics. And the leakage current conduction mechanisms as functions of annealing temperatures are also discussed. (c) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
WOS关键词	THIN-FILMS ; TEMPERATURE-DEPENDENCE ; HAFNIUM ; DEPOSITION ; STACKS ; ALD
WOS研究方向	Materials Science
语种	英语
WOS记录号	WOS:000372676000028
资助机构	National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/22139]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 3.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
推荐引用方式 GB/T 7714	Jin, Peng,He, Gang,Xiao, Dongqi,et al. Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics[J]. CERAMICS INTERNATIONAL,2016,42(6):6761-6769.
APA	Jin, Peng.,He, Gang.,Xiao, Dongqi.,Gao, Juan.,Liu, Mao.,...&Sun, Zhaoqi.(2016).Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics.CERAMICS INTERNATIONAL,42(6),6761-6769.
MLA	Jin, Peng,et al."Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics".CERAMICS INTERNATIONAL 42.6(2016):6761-6769.