48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth | |
Zhi Liu; Fan Yang; Wenzhou Wu; Hui Cong; Jun Zheng; Chuanbo Li; Chunlai Xue; Member,IEEE; Buwen Cheng; Qiming Wang | |
刊名 | JOURNAL OF LIGHTWAVE TECHNOLOGY |
2017 | |
卷号 | 35期号:24页码:5306-5310 |
学科主题 | 光电子学 |
公开日期 | 2018-07-02 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/28694] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Zhi Liu,Fan Yang,Wenzhou Wu,et al. 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2017,35(24):5306-5310. |
APA | Zhi Liu.,Fan Yang.,Wenzhou Wu.,Hui Cong.,Jun Zheng.,...&Qiming Wang.(2017).48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth.JOURNAL OF LIGHTWAVE TECHNOLOGY,35(24),5306-5310. |
MLA | Zhi Liu,et al."48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth".JOURNAL OF LIGHTWAVE TECHNOLOGY 35.24(2017):5306-5310. |
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