Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

	Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires
	Jun-Wei Luo; Shu-Shen Li; Zunger, Alex
刊名	Physical Review Letters
	2017
卷号	119 期号:12 页码:1
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28569]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Jun-Wei Luo,Shu-Shen Li,Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires[J]. Physical Review Letters,2017,119(12):1.
APA	Jun-Wei Luo,Shu-Shen Li,&Zunger, Alex.(2017).Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires.Physical Review Letters,119(12),1.
MLA	Jun-Wei Luo,et al."Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires".Physical Review Letters 119.12(2017):1.