Influence of Oxygenating Port Position on Properties of HfO_2 Films Deposited by Electron Beam Evaporation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 中科院强激光材料重点实验室

	Influence of Oxygenating Port Position on Properties of HfO_2 Films Deposited by Electron Beam Evaporation
	Shao JD(邵建达); Zheng RX(郑如玺); Yi K(易葵); Fan ZX(范正修); Tu FF(涂飞飞)
刊名	中国激光
	2016
卷号	43 期号:10 页码:1003001
通讯作者	rxzheng@siom.ac.cn ; kyi@siom.ac.cn
中文摘要	充氧口位置直接影响了真空室内的氧气分布,进而对薄膜的光学性能造成重要影响。为了研究充氧口位置对HfO_2薄膜性质的影响,在2个典型的充氧口位置采用电子束蒸发技术在石英基底上沉积了 HfO_2单层膜,并结合紫外-可见光分光光度计和X射线光电子能谱仪研究了不同充氧口位置下制得的HfO_2薄膜的光学性能和化学成分。实验结果表明,将充氧口设置在基片附近更有利于得到致密性好、氧化充分的HfO_2薄膜。根据实际真空室的构造建立简化的模型,应用k-epsilon二次方程湍流模型对镀膜过程中的氧气分布进行了三维数值模拟计
英文摘要	Oxygenating port position directly affects the distribution of oxygen in the vacuum chamber, and then has significant impact on the optical performance of the film. To study the influence of oxygenating port position on the properties of HfO_2 films, the HfO_2 films are deposited on the silica substrates by electron beam evaporation technology at two typical oxygenating port positions. Ultraviolet-visible spectrophotometer and X-ray photoelectron spectrometer are employed to study the optical properties and the chemical components of HfO_2 films prepared at different oxygenating port positions. The experimental results show that providing oxygenating port in the vicinity of the substrate is more conducive to obtain good compactness and full oxidation of HfO_2 films. A simplified model is established according to the configuration of the actual vacuum chamber. The turbulence model of k-epsilon quadratic equation is applied to carry on three-dimensional numerical simulation calculation on the distribution of oxygen in the coating process. The theoretical calculation fits well with the experimental results.
收录类别	CSCD
资助信息	国家自然科学基金
CSCD记录号	CSCD:5829557
WOS记录号	CSCD:5829557
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28112]
专题	上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Shao JD,Zheng RX,Yi K,et al. Influence of Oxygenating Port Position on Properties of HfO_2 Films Deposited by Electron Beam Evaporation[J]. 中国激光,2016,43(10):1003001.
APA	邵建达,郑如玺,易葵,范正修,&涂飞飞.(2016).Influence of Oxygenating Port Position on Properties of HfO_2 Films Deposited by Electron Beam Evaporation.中国激光,43(10),1003001.
MLA	邵建达,et al."Influence of Oxygenating Port Position on Properties of HfO_2 Films Deposited by Electron Beam Evaporation".中国激光 43.10(2016):1003001.