Thermal lithography characteristics of SbBi thin films

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Thermal lithography characteristics of SbBi thin films
	Li, Liang; Zhang, Kui
	2016
通讯作者	zkui1939@163.com
英文摘要	Laser thermal lithography technology based on the optothermal mode is a very promising fabrication approach in high-density optical storage and semiconductor industry. SbBi thin film is a typical phase change material which has been deep-going studied and widely used as the super-resolution mask layer. Phase transformation of the SbBi material from amorphous to crystalline state can be achieved by vacuum annealing or laser irradiating. In this work, SbBi thin films as a new thermal lithography material are investigated for the first time. The thermal lithography characteristics of SbBi thin films were studied by means of etching in the ammonium sulfide solution. Line-shaped structures were developed using our laser-induced crystallization apparatus, followed by etching in the ammonium sulfide solution. It is found that the etching rate of the amorphous state is greater than that of the crystalline state, which are 17.8 nm/min and 4 nm/min, respectively. The mechanism of the difference in etching rate between the two states is also discussed. These results indicate that SbBi thin film is a potential candidate for thermal lithography materials.
会议录	2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
语种	英语
ISSN号	0277-786X
内容类型	会议论文
源URL	[http://ir.siom.ac.cn/handle/181231/27428]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Li, Liang,Zhang, Kui. Thermal lithography characteristics of SbBi thin films[C]. 见:.