Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect

	Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect
	Caihong Jia; Xiaoqian Yin; Guang Yang; Yonghui Wu; Jiachen Li; Yonghai Chen; Weifeng Zhang
刊名	Appl. Phys. Lett.
	2017
卷号	111 页码:113506
学科主题	半导体材料
公开日期	2018-05-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28295]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Caihong Jia,Xiaoqian Yin,Guang Yang,et al. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect[J]. Appl. Phys. Lett.,2017,111:113506.
APA	Caihong Jia.,Xiaoqian Yin.,Guang Yang.,Yonghui Wu.,Jiachen Li.,...&Weifeng Zhang.(2017).Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect.Appl. Phys. Lett.,111,113506.
MLA	Caihong Jia,et al."Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect".Appl. Phys. Lett. 111(2017):113506.