Enhancement of below gap transmission of InAs single crystal via suppression of native defects
Guiying Shen; Youwen Zhao; Zhiyuan Dong; Jingming Liu; Hui Xie; Yongbiao Bai; Xiaoyu Chen
刊名Materials Research Express
2017
卷号4期号:3页码:036203
学科主题半导体材料
公开日期2018-05-23
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/28308]  
专题半导体研究所_中科院半导体材料科学重点实验室
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GB/T 7714
Guiying Shen,Youwen Zhao,Zhiyuan Dong,et al. Enhancement of below gap transmission of InAs single crystal via suppression of native defects[J]. Materials Research Express,2017,4(3):036203.
APA Guiying Shen.,Youwen Zhao.,Zhiyuan Dong.,Jingming Liu.,Hui Xie.,...&Xiaoyu Chen.(2017).Enhancement of below gap transmission of InAs single crystal via suppression of native defects.Materials Research Express,4(3),036203.
MLA Guiying Shen,et al."Enhancement of below gap transmission of InAs single crystal via suppression of native defects".Materials Research Express 4.3(2017):036203.
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