The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition

	The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition
	Gong, HF; Lu, W; Wang, LM; Li, GP; Zhang, SX
刊名	COMPUTATIONAL MATERIALS SCIENCE
	2012-12
卷号	65 页码:230-234
关键词	Cluster deposition Initial velocity Degree of epitaxy Molecular dynamics simulation Thin film
ISSN号	0927-0256
通讯作者	Lu, W (reprint author), Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA.
学科主题	Materials Science
出版地	AMSTERDAM
语种	英语
WOS记录号	WOS:000310357400034
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/117188]
专题	核科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Gong, HF,Lu, W,Wang, LM,et al. The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition[J]. COMPUTATIONAL MATERIALS SCIENCE,2012,65:230-234.
APA	Gong, HF,Lu, W,Wang, LM,Li, GP,&Zhang, SX.(2012).The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition.COMPUTATIONAL MATERIALS SCIENCE,65,230-234.
MLA	Gong, HF,et al."The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition".COMPUTATIONAL MATERIALS SCIENCE 65(2012):230-234.