Effects of different ions implantation on yellow luminescence from GaN

	Effects of different ions implantation on yellow luminescence from GaN
	You, W; Zhang, XD; Zhang, LM; Yang, Z; Bian, H; Ge, Q; Guo, W; Wang, WX; Liu, ZM
刊名	PHYSICA B-CONDENSED MATTER
	2008-08-01
卷号	403 期号:17 页码:2666-2670
关键词	ion implantation photoluminescence yellow luminescence gallium nitride (GaN)
ISSN号	0921-4526
通讯作者	Liu, ZM (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Physics
出版地	AMSTERDAM
语种	英语
WOS记录号	WOS:000257915100025
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/116846]
专题	核科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	You, W,Zhang, XD,Zhang, LM,et al. Effects of different ions implantation on yellow luminescence from GaN[J]. PHYSICA B-CONDENSED MATTER,2008,403(17):2666-2670.
APA	You, W.,Zhang, XD.,Zhang, LM.,Yang, Z.,Bian, H.,...&Liu, ZM.(2008).Effects of different ions implantation on yellow luminescence from GaN.PHYSICA B-CONDENSED MATTER,403(17),2666-2670.
MLA	You, W,et al."Effects of different ions implantation on yellow luminescence from GaN".PHYSICA B-CONDENSED MATTER 403.17(2008):2666-2670.